Method of preparing doped single crystals of cadmium telluride

Details Method of preparing doped single crystals of cadmium telluride Method of preparing doped single crystals of cadmium telluride

1975-07-08

1979-02-27

Emery, Stephen J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156609, 156611, 156616R, 156DIG72, 252 623ZT, 423509, B01J 1726, B01J 1736, C01G 1100

Patent

active

041417771

ABSTRACT:
A method of preparing doped single crystals of cadmium telluride in a single ampoule accommodating a graphite container provided with an opening.
Cadmium and a dopant are directly placed in the ampoule, and tellurium is placed in the graphite container. The ampoule is heated at a temperature at which cadmium vapors are formed to penetrate through the opening, together with vapors of the dopant, into the graphite container wherein they react with tellurium vapors and melt to form cadmium telluride. As the temperature grows higher, cadmium telluride is converted into melt which is then subjected to directive crystallization. The resulting crystal is cooled at a rate not exceeding 15.degree. per hour.
The crystals thus obtained have the following properties:

REFERENCES:
patent: 2858275 (1958-10-01), Folberth
patent: 2944975 (1960-07-01), Folberth
patent: 3366454 (1968-01-01), Folberth et al.
Lorenz, "Preparation of CdTe Crystals from Near Stoichiometric and Cd Rich Melt Compositions Under Constant Cd Pressure," J. Applied Physics, vol. 33, No. 11, pp. 3304-3306, (Nov. 1962).

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