Method of preparing crystalline compounds A.sup.IVA B.sup.VIA

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156DIG72, B01D 1726

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active

041417780

ABSTRACT:
A method of preparing crystalline compounds A.sup.IVA B.sup.VIA, wherein A.sup.IVA is Si, Ge, Sn, or Pb; and B.sup.VIA is S, Se, or Te, which comprises thermal decomposition, at the surface of a substrate heated to a temperature ranging from 250 to 450.degree. C., of an organoelemental compound containing chemically combined elements A.sup.IVA and B.sup.VIA of the general formula R.sub.k A.sub.l IVA B.sub.m.sup.VIA R'.sub.n' wherein A.sup.IVA is Si, Ge, Sn, or Pb; B.sup.VIA is S, Se, or Te; R and R' are hydrogen or an alkyl of 1 to 4 carbon atoms; k = 0-6, 1 = 1-2, m = 1-4, n = 0-4; when 1 = 1, m = 1-4; when 1 = 2, m = 1-2. The method according to the present invention makes it possible to substantially reduce the decomposition temperature of the starting element organic compound at the substrate surface and to obtain the final products which are stoichiometric in the composition thereof. The present invention is useful in the manufacture of semiconductor elements and protective coatings.

REFERENCES:
patent: 3174823 (1965-03-01), Kopelman
patent: 3178312 (1965-04-01), Johnson

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