Method of preparing a plan-view sample of an integrated circuit

Details Method of preparing a plan-view sample of an integrated circuit Method of preparing a plan-view sample of an integrated circuit

1996-12-13

1999-04-06

Anderson, Bruce

Radiant energy

Inspection of solids or liquids by charged particles

Electron microscope type

250307, H01J 37295, H01J 3726

Patent

active

058922253

ABSTRACT:
A plan-view sample of an integrated circuit is prepared for transmission electron microscopy by marking a faulty circuit element, lapping the upper surface of the sample to a mirror finish, lapping the lower surface to reduce the thickness of the entire sample, and further processing the lower surface by lapping or dimpling, combined with ion milling as necessary, to thin the sample in the vicinity of the fault. A sample prepared in this way affords a wide view, and can be tilted at large angles. A known thickness of a particular type of layer in the sample can be left by holding the sample at a predetermined angle while the sample is lapped.

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Patent Abstracts of Japan, vol. 95, No. 1, 7 Oct. 1994 & JP 06 281551 A (Sharp Corporation).
Taritamo et al., "Application of the Focused-Ion-Beam Technique for Preparing the Cross-Section Sample of Chemical Vapor Deposition Diamond Thin Film for High-Resolution Transmission Electron Microscope Observation", Japanse Journal of Applied Physics, vol. 31 (1992), pp. L1305-L1308.

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