Method of preparation of electron emissive materials

Details Method of preparation of electron emissive materials Method of preparation of electron emissive materials

1975-03-21

1976-08-03

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156 3, 156 8, 156 17, 357 30, 357 31, H01L 2120

Patent

active

039727700

ABSTRACT:
Preferential etches for Gallium Arsenide and Gallium Aluminum Arsenide materials provide a novel single crystalline layer thin film of GaAs for use as a free standing transmission secondary electron emitter or as a photocathode layer on an intermediate epitaxial layer of GaAlAs. Etching of a central area of a substrate layer of GaAs provides an annular rim supporting structure for the epitaxial GaAlAs and GaAs layers. A particular composition of hydrogen peroxide and ammonium hydroxide preferentially etches GaAs while hydrochloric acid preferentially etches GaAlAs.

REFERENCES:
patent: 3752713 (1973-08-01), Sakuta et al.
patent: 3764424 (1973-10-01), Sayko
patent: 3801391 (1974-04-01), Dyment et al.
patent: 3868523 (1975-02-01), Klopfer et al.
patent: 3913215 (1975-10-01), Heckl
Kressel, H., "Method of Making a Transmission Photocathode Device," U.S. Published Patent Appl. B 309756.

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