Method of polishing semiconductor substrate

Details Method of polishing semiconductor substrate Method of polishing semiconductor substrate

1996-12-03

1997-12-23

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

H01L 2100, B24B 100

Patent

active

057003483

ABSTRACT:
In a CMP (chemical and mechanical polishing) method in which an insulating film is formed on one surface (back surface) of a semiconductor substrate and then the insulating film is chemically and mechanically polished with abrasive, an insulating thin film is formed on the surface of the semiconductor substrate on which no insulating film is provided and silicon is exposed to the outside, and a hydrophilic film is formed on the surface of the insulating thin film. Thereafter, the CMP is conducted to polish the insulating film on the back surface, and then the abrasive is chemically and physically removed. Accordingly, by providing the hydrophilic thin film on the back surface of the semiconductor substrate, it is avoidable that the abrasive on the back surface of the semiconductor substrate is partially dried and the abrasive grains are fixed to the back surface, so that the effect of removing the abrasive in the subsequent step can be improved.

REFERENCES:
patent: 4050954 (1977-09-01), Basi
patent: 5261966 (1993-11-01), Mashimo et al.
patent: 5320706 (1994-06-01), Blackwell
patent: 5409770 (1995-04-01), Netsu et al.

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