Method of polishing GaN substrate

Details Method of polishing GaN substrate Method of polishing GaN substrate

2006-07-14

2008-11-18

Norton, Nadine (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

C438S692000, C438S702000, C438S707000, C216S088000, C216S089000, C257S076000, C257S103000, C156S345120

Reexamination Certificate

active

07452814

ABSTRACT:
In a polishing method of a GaN substrate according to this invention, first, while supplying a polishing solution27containing abrasives23and a lubricant25,onto a platen101,the GaN substrate is polished using the platen101and the polishing solution27(first polishing step). Then the GaN substrate is polished using the platen101in which abrasives29are buried, while supplying a lubricant31onto the platen101in which the abrasives29are buried (second polishing step).

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