Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1997-10-27
2000-01-11
Stinson, Frankie L.
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 38, 216 81, 20419234, H01L 21302
Patent
active
060131918
ABSTRACT:
A method for polishing the surface of a diamond film with a low power density plasma in a reactor which comprises disposing O.sub.2 gas and a fluorinated gas such as SF.sub.6, NF.sub.3, and C.sub.2 F.sub.6 in the reactor, providing power to the reactor so that the power density in the reactor is between about 1.0 watts/cm.sup.2 and about 1.1 watts/cm.sup.2 for a first duration, and maintaining temperature in the reactor at between about 200.degree. to about 400.degree.. The method may alternatively comprise disposing a sputter gas such as Ar,O.sub.2 or N.sub.2 in the reactor, providing power to the reactor so that the power density in the reactor is between about 3.0 watts/cm.sup.2 and about 7.5 watts/cm.sup.2 for a first duration, and performing a sputter etch, disposing O.sub.2 gas and a fluorinated gas such as SF.sub.6, NF.sub.3, and C.sub.2 F.sub.6 in the reactor, and providing power to the reactor so that the power density in the reactor is between about 1.5 watts/cm.sup.2 and about 3.0 watts/cm.sup.2 for a second duration.
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Herb John A.
Monreno Miguel A.
Nasser-Faili Firooz
Advanced Refractory Technologies, Inc.
Alanko Anita
Stinson Frankie L.
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