Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-05-30
1999-04-13
Chaudhuri, Olik
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
451285, 451 41, 451283, H01L 21302
Patent
active
058937552
ABSTRACT:
A method of polishing semiconductor wafers is provided. The method will not impair the original (pre-polishing) contour of semiconductor wafers, and semiconductor wafers can be polished so as to have high flatness. In the method according to this invention, a silicon rubber sheet 2 is fixed on a base 4, and an abrasive cloth 5 is secured on the silicon rubber sheet 2. A template 1 of thickness close to that of a semiconductor wafer 10 is secured on a backing pad 32. The semiconductor wafer 10 is restrained by the template 1 and is impelled in to contact with the abrasive cloth 5 to polish effectively.
REFERENCES:
patent: 4910155 (1990-03-01), Cote et al.
patent: 5232875 (1993-08-01), Tuttle et al.
patent: 5736427 (1998-04-01), Henderson
Chaudhuri Olik
Komatsu Electronic Metals Co. Ltd.
Oh Edwin
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