Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-12-25
2007-12-25
Tran, Binh X. (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C216S084000, C216S085000, C216S089000
Reexamination Certificate
active
11314060
ABSTRACT:
A method of polishing a semiconductor layer formed on a transparent substrate is described, the method including measuring the thickness of the semiconductor from the substrate side of the semiconductor layer simultaneously with the polishing, and using the thickness measurement to modify the polishing.
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Cites Jeffrey Scott
Darcangelo Charles Michael
Gregorski Steven Joseph
Maschmeyer Richard Orr
Stocker Mark Andrew
Able Kevin M.
Corning Incorporated
Tran Binh X.
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