Method of polishing a semiconductor-on-insulator structure

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S692000, C216S084000, C216S085000, C216S089000

Reexamination Certificate

active

11314060

ABSTRACT:
A method of polishing a semiconductor layer formed on a transparent substrate is described, the method including measuring the thickness of the semiconductor from the substrate side of the semiconductor layer simultaneously with the polishing, and using the thickness measurement to modify the polishing.

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