Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-04-03
1999-02-02
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438633, 438691, H01L 214763
Patent
active
058664777
ABSTRACT:
The present invention is intended to provide a polishing method for a chamfered portion of a semiconductor silicon substrate, wherein edge relief of an oxidized silicon layer and/or an extrinsic gettering layer, and mirror polishing of chamfered portion can be performed at the same time for the semiconductor silicon substrate having the oxidized silicon layer and/or extrinsic gettering layer on the bottom thereof. The semiconductor silicon substrate is tilted at a designated chamfered angle .theta. with respect to an axis of a buff being mounted in a polishing apparatus to mirror polish the chamfered portion on one side. Then, the semiconductor silicon substrate is reversed, and the mirror polish is performed for the chamfered portion on the other side. A mean diameter of the colloidal silica constituting the polish liquid is 50.about.150 nm, the pH value of the polish liquid is 10.about.11, a specific gravity at 20.degree. C. is 1.about.1.5, and a concentration is 30.about.50 wt %. The increase of mean diameter and grain number of the colloidal silica constituting the polish liquid being provided to the polishing portion, makes the polishing way be called as mechanical polishing preferable to chemical polishing. Hence, the edge removing of the oxidized silicon layer which was considered difficult to accomplish in the past is now easy to accomplish. A groove with a shape corresponding to the shape of the chamfered portion of the substrate can be formed on the circumference of the buff. The substrate is pushed into the groove so that polishing of both sides can be performed at the same time.
REFERENCES:
patent: 5226930 (1993-07-01), Sasaki
patent: 5476413 (1995-12-01), Hasegawa et al.
patent: 5527215 (1996-06-01), Rubino et al.
Ogawa Yoshihiro
Wakabayashi Hiromi
Yoshimura Kunimi
Berry Renee R.
Bowers Charles
Komatsu Electric Metals Co., Ltd.
LandOfFree
Method of polishing a chamfered portion of a semiconductor silic does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of polishing a chamfered portion of a semiconductor silic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of polishing a chamfered portion of a semiconductor silic will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1117066