Method of plating an interconnect metal onto a metal in VLSI dev

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430314, 430315, 430316, 430317, 430318, 430319, 156642, 204 15, G03C 500

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active

046198873

ABSTRACT:
A method of plating an interconnect or contact metal of higher conductivity than aluminum onto a metal layer in VLSI devices includes depositing a coating of insulator over the metal layer, patterning and etching the insulator coating into a mask of the reverse image of a desired lead pattern and then depositing the interconnect metal onto the exposed metal layer. Following depositing the insulator mask and underlaying metal is selectively removed.

REFERENCES:
patent: 4325780 (1982-04-01), Schulz, Jr.
Polyimide Liftoff Technology for High Density LSI Metallization, Homma et al, IEEE Transactions on Electron Devices, vol. Ed-28, No. 5, pp. 550-556, May 1981.
Liftoff of Thick Metal Layers Using Multilayer Resist, Lyman et al, J. Vac. Sci. Technol., 19(4), pp. 1325-1328, Nov./Dec. 1981.
Fabrication of Printed Circuits Without Undercutting of Conduction Lines, Lester et al, IBM Tech. Disc. Bull., vol. 9, No. 10, Mar., 1967, pp. 1258-1259.

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