Method of plasma etching with parallel plate reactor having a gr

Details Method of plasma etching with parallel plate reactor having a gr Method of plasma etching with parallel plate reactor having a gr

1990-08-10

1991-05-14

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

20429834, 156646, 156662, H01L 21306

Patent

active

050153315

ABSTRACT:
A parallel plate reactor having a grounded grid disposed between an RF powered electrode and a grounded electrode upon which a substrate is disposed. A method of utilizing the above apparatus consists of etching the substrate using a composition of 30-100% NF.sub.3 (nitrogen trifluoride) at 25 SCCM (standard cubic centimeter per minute) and 0-70% He (helium) at 75 SCCM to etch a layer of PECVD (plasma enchanced chemcial vapor deposition) Si.sub.3 N.sub.4 (silicon nitride). The etching takes place at 200 mtorr to 5 torr pressure and 50-400 watts RF power.

REFERENCES:
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Boyd, Coldren, Storz, Directional Reaction Ion Etching at Oblique Angles Applied Physics Letters, 36(7), Apr. 1, 1980, pp. 583-585.

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