Method of plasma etching amorphous carbon films

Details Method of plasma etching amorphous carbon films Method of plasma etching amorphous carbon films

1989-03-17

1990-12-04

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118 501, 156345, H01L 2162

Patent

active

049751441

ABSTRACT:
An etching method for selectively eliminating carbon material deposited on a substrate is described. A layer of masking material may be applied over areas of the carbon coating whose removal is not desired. After disposing the substrate coated with the carbon material in a CVD reaction chamber, NF.sub.3 is admitted to the chamber and converted into a plasma etchant comprising fluorine ions or radicals by inputting high frequency energy. The fluorine ions or radicals remove all unmasked carbon, leaving a carbon film pattern on the substrate which may be used in the manufacture of an IC. The carbon material elimination method can also be used for chamber cleaning to removing carbon deposited debris from the inside of the CVD reaction chamber.

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patent: 4756794 (1987-08-01), Yoder
patent: 4786352 (1986-09-01), Benzing
patent: 4795880 (1988-03-01), Hayes
patent: 4816113 (1988-02-01), Yamazaki

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