Method of plasma etching a substrate with a gaseous organohalide

Details Method of plasma etching a substrate with a gaseous organohalide Method of plasma etching a substrate with a gaseous organohalide

1989-11-29

1991-10-01

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156668, H01L 2100

Patent

active

050531042

ABSTRACT:
A plasma etching process is disclosed wherein the substrate to be etched is first exposed to an etchant gas containing a volatile organohalide. When the etch rate is stabilized, the organohalide in the etchant gas is replaced by oxygen whereby the etch rate of the substrate is immediately increased to a substantially higher value. When the above is repeatedly done a substantially higher average etch rate is obtained.

REFERENCES:
patent: 4174251 (1979-11-01), Paschke
patent: 4487652 (1984-12-01), Almgren
patent: 4511430 (1985-04-01), Chen et al.
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 4698128 (1987-10-01), Berglund et al.

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