Method of plasma etching

Details Method of plasma etching Method of plasma etching

1995-10-18

1998-12-01

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 7, 438721, 438742, H01L 21302, B44C 122

Patent

active

058438483

ABSTRACT:
There is provided a process which assures a large etching selectivity for resist mask or interlayer insulating film and excellent anisotropy and results in lesser particle contamination and after-corrosion by mainly constituting, with a decomposition byproduct of resist mask, a side wall protection film material which is indispensable for anisotropic etching in the plasma etching of an Al-based metal and by enhancing ion impact resistance and radical attack resistance through reinforcement of film quality to obtain sufficient side wall protection film even when an amount of deposition of the side wall protection film is reduced.

REFERENCES:
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4256534 (1981-03-01), Levinstein et al.
patent: 5207868 (1993-05-01), Shinohara
patent: 5387556 (1995-02-01), Xiaobing et al.
Sawai, H., et al, "Reaction Mechanism of Highly Selective Etching of AlSiCu Using Brominated Gas Plasma", Dry Process Symposium, 1989, pp. 45-50.
Samukawa, Seiji, et al., "Al-4% Cu Dry Etching Technology", 33rd Symposium on Integrated Circuit, 1987, pp. 115-120.
"Technical Report", Semiconductor World, pp. 103-109, Dec. 1990.
"Reactive Ion Etching of Aluminum and Aluminum Alloys in an RF Plasma Containing Halogen Species"; J. Vac. Sci. Tech; (1978); 15(2); Schaible et. al.; abstract.

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