Method of plasma etching

Details Method of plasma etching Method of plasma etching

1975-12-29

1978-09-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 3151112, H01L 21306

Patent

active

041151844

ABSTRACT:
For plasma etching, to obtain high quality, accurate and reproducible results, the temperature of the plasma gas is measured, conveniently as close as possible to the articles to be etched, variations in the temperature from a desired datum being used to control the RF power supply and thus the RF power fed to the reaction chamber. Extremely quick and accurate control of temperature is provided and this provides accurate and reproducible control of etch rate. The rapid temperature response also enables a quick and accurate preheat cycle to be provided prior to the etching cycle. A particularly useful temperature measuring device is a gas thermometer, with a quartz capillary.

REFERENCES:
patent: 3251228 (1968-05-01), Hanebuth
patent: 3315063 (1967-04-01), Ihlenfelot
patent: 3569777 (1969-07-01), Beaudry
patent: 3574014 (1971-04-01), Hugle
patent: 3621378 (1971-11-01), K leiman et al.
patent: 3705055 (1972-12-01), Christensen et al.
patent: 3867216 (1975-02-01), Jacob
patent: 3879597 (1975-04-01), Bersin et al.
Poulsen et al., "Importance of Temperature and Temperature Control in Plasma Etching" Symposium on Etching for Pattern Definition, 1976, pp. 111-121.

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