Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1994-05-23
1995-07-25
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156345, 20429838, B44C 122
Patent
active
054358868
ABSTRACT:
A method of electron cyclotron resonance plasma etching including generating a constant plasma in a gas in a chamber containing a semiconductor wafer by supplying microwave energy to the chamber continuously and applying a pulsed direct current bias to the semiconductor wafer, wherein the pulsed bias has a period substantially equal to a time constant determined by the capacitance of the semiconductor wafer and the resistance of an ion sheath at the surface of the semiconductor wafer.
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Caughman et al, "The Effects of Substrate Bias on Plasma Parameters in an Electron Cyclotron Resonance Plasma Reactor", J. Vac. Sci. Technology A9 (6), Nov./Dec. 1991, pp. 3113-3118.
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Morimoto et al, "The Influence Of Incident Angle Distributions Of Plasma Particles On The Etched Profiles Of Silicon Films", 1991 Dry Process Symposium, pp. 57-62.
Fujiwara Nobuo
Hoshiko Takahiro
Kawai Kenji
Maruyama Takahiro
Breneman R. Bruce
Chang Joni Y.
Mitsubishi Denki & Kabushiki Kaisha
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