Method of planarizing an inter-layer dielectric layer

Details Method of planarizing an inter-layer dielectric layer Method of planarizing an inter-layer dielectric layer

1997-06-25

1999-03-23

Beck, Shrive

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, 438692, 438699, 438761, 438763, 438778, 438784, 438787, 427574, 427579, 427255, 4272553, 4272557, C23C 1640

Patent

active

058858946

ABSTRACT:
A method of planarizing an inter-layer dielectric layer includes using a high density plasma chemical vapor deposition method to deposit an undoped dielectric, which increases the polishing efficiency in a subsequent chemical-mechanical polishing operation, and eliminates the need for a high temperature densifying treatment for planarization. A chemical-mechanical polishing operation is used to planarize the inter-layer dielectric.

REFERENCES:
patent: 5514616 (1996-05-01), Rostoker et al.
patent: 5554554 (1996-09-01), Bastani et al.
patent: 5686356 (1997-11-01), Jain et al.
Schuegraf, Handbook of Thin-Film Deposition Processes and Techniques, Noyes Publications, Park Ridge, New Jersey, pp. 128-129. (no month), 1988.

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