Method of planarizing an insulating layer

Details Method of planarizing an insulating layer Method of planarizing an insulating layer

1996-12-20

1998-04-28

Niebling, John

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438 92, 438795, H01L 21425

Patent

active

057443971

ABSTRACT:
Disclosed herein is a method of manufacturing a semiconductor device, which comprises steps of forming metal patterns, irradiating an electron beam to electrically neutralize the charge distribution of the metal layer and forming an O.sub.3 -TEOS layer used for planarization of the interlayer insulating layer.

REFERENCES:
patent: 4116721 (1978-09-01), Ning et al.
patent: 5254497 (1993-10-01), Liu
patent: 5286978 (1994-02-01), Yoshida et al.
patent: 5314839 (1994-05-01), Tatsumi et al.
patent: 5560778 (1996-10-01), Park et al.

Affiliated with

Also associated with

Rating

Method of planarizing an insulating layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of planarizing an insulating layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of planarizing an insulating layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1531561