Method of planarizing a surface on a semiconductor wafer

Details Method of planarizing a surface on a semiconductor wafer Method of planarizing a surface on a semiconductor wafer

1998-05-20

2000-07-04

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438692, 438693, 438745, 438747, 438750, 438754, H01L 21304

Patent

active

060838388

ABSTRACT:
The present invention provides a method of planarizing a surface on a semiconductor wafer containing metal. In one embodiment, the method comprises selecting a slurry that contains conventional components of an abrasive and an oxidant. The oxidant is known to have a known rate of oxidation and is capable of oxidizing the metal. This embodiment further comprises reducing a rate of exposure of the metal to the oxidant by altering a property of the slurry, oxidizing the metal at the reduced rate to form an oxide of the metal, and removing the oxide with the abrasive to produce a planarized surface of the semiconductor wafer.

REFERENCES:
patent: 5415798 (1995-05-01), Pease et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5607718 (1997-03-01), Sasaki et al.
patent: 5614444 (1997-03-01), Farkas et al.
Solomons, Graham. Organic Chemistry 5 th ed. John Wiley & Son Inc. p. 1050-1051, 1992.

Affiliated with

Also associated with

Rating

Method of planarizing a surface on a semiconductor wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of planarizing a surface on a semiconductor wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of planarizing a surface on a semiconductor wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1486067