Method of planarizing a semiconductor substrate with an...

Details Method of planarizing a semiconductor substrate with an... Method of planarizing a semiconductor substrate with an...

2006-09-12

2006-09-12

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S781000, C438S693000, C438S694000, C257SE21580, C257SE21576, C216S038000

Reexamination Certificate

active

07105452

ABSTRACT:
The present invention provides a method of planarizing a substrate, the method including, forming, on the substrate, a patterned layer having a first shape associated therewith; and processing the patterned layer, with the first shape compensating for variations in the processing such that upon processing the patterned layer, the patterned layer comprises a substantially planar shape.

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