Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1996-06-19
1998-09-08
Chapman, Mark
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
216 2, 216 38, B44C 122
Patent
active
058045147
ABSTRACT:
The present invention relates to a method of planarizing a film of a semiconductor device, which can improve the yield of the device by improving the planarizing in a way that coats a photoresist on an insulating film having a high topology, entirely exposes it using low energy, maintains the photoresist at the valley portion of the insulating film during the development process and then etches the opened insulating film using the remaining photoresist as an etching barrier.
REFERENCES:
patent: 4523975 (1985-06-01), Groves et al.
patent: 4952274 (1990-08-01), Abraham
Chapman Mark
Harris, Esq. Scott
Hyundai Electronics Industries Co,. Ltd.
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