Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-04-17
1999-08-17
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438631, 257739, 257773, H01L 2144
Patent
active
059407298
ABSTRACT:
According to the present invention a technique for providing a planarized substrate with dendritic connections of solder balls, especially a multi-layer ceramic substrate is provided. In the case where the substrate has a raised central portion on the top surface on which are disposed top surface metallurgy pads, a layer of conformable photoimagable material is placed over the top surface.
The photoimagable material is exposed and developed in a pattern corresponding to the pattern of the top surface metallurgy pads to form vias in the photoimagable material. Copper is plated in the vias in contact with the top surface metallurgy pads. The exposed surface of the photoimagable surface is then planarized, preferably by mechanical polishing to form a flat planar surface, with the ends of the vias exposed. Dendritic connector pads are then grown on the exposed ends of the vias to which solder ball connections of an I/C chip are releasably connected.
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Downes, Jr. Francis Joseph
Fuerniss Stephen Joseph
Hill Gary Ray
Ingraham Anthony Paul
Markovich Voya Rista
Hogg William N.
International Business Machines Corp.
Picardat Kevin M.
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