Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Patent
1998-04-27
2000-06-27
Everhart, Caridad
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
438424, H01L 2176
Patent
active
060806354
ABSTRACT:
A method of preserving alignment marks in integrated circuit substrates using shallow trench isolation after planarization using chemical mechanical polishing. A layer of silicon nitride is formed on the substrate and openings defining alignment trenches and isolation trenches are etched in the silicon nitride layer. Alignment trenches are formed in alignment regions of the substrate and isolation trenches are formed in the active region of the substrate during the same process step using the openings in the silicon nitride layer as a mask. A layer of dielectric is then deposited on the substrate filling the alignment trenches and the isolation trenches. The dielectric is then etched away from the alignment trenches and the substrate is planarized. After a layer of conducting material is deposited on the wafer the alignment trenches are preserved.
REFERENCES:
patent: 5266511 (1993-11-01), Takao
patent: 5401691 (1995-03-01), Caldwell
patent: 5627110 (1997-05-01), Lee et al.
patent: 5893744 (1999-04-01), Wang
patent: 5911110 (1999-06-01), Yu
patent: 5923996 (1999-07-01), Shih et al.
patent: 5930644 (1999-07-01), Tsai et al.
patent: 5963816 (1999-10-01), Wang et al.
Chang Jui-Yu
Jang Syun-Ming
Ackerman Stephen B.
Everhart Caridad
Prescott Larry J.
Saile George O.
Taiwan Semiconductor Manufacturing Company
LandOfFree
Method of photo alignment for shallow trench isolation with chem does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of photo alignment for shallow trench isolation with chem, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of photo alignment for shallow trench isolation with chem will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1784021