Method for forming a gate electrode in a semiconductor device

Details Method for forming a gate electrode in a semiconductor device Method for forming a gate electrode in a semiconductor device

1995-05-15

1996-07-16

Fourson, George

Fishing, trapping, and vermin destroying

437193, H01L 218247

Patent

active

055366678

ABSTRACT:
A method for forming a gate electrode in a semiconductor device is disclosed. An injection of the holes which moved from the control gate to a dielectric layer is suppressed since the control gate electrode is formed with a double layer structure composed of polysilicon-germanium and polysilicon. Accordingly, the data retention time is increased by increasing the energy barrier for a hole.

REFERENCES:
patent: 4334292 (1982-06-01), Kotecha
patent: 4442449 (1984-04-01), Lehrer et al.
patent: 5110753 (1992-05-01), Gill et al.
patent: 5336903 (1994-08-01), Ozturk et al.
patent: 5422289 (1995-06-01), Pierce

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