Method of performing ion implantation

Details Method of performing ion implantation Method of performing ion implantation

2009-03-12

2011-11-22

Kim, Robert (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200, C250S492300

Reexamination Certificate

active

08063389

ABSTRACT:
A method of performing an ion implantation is provided. A workpiece is installed in the ion implanter. A wafer is provided in a receiving space within an ion implanter. An ion beam is generated by an ion source of the ion implanter. The bombard of the ion beam is blocked and particles generated during or after conducting the step of generating the ion beam are collected by the workpiece.

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