Method of peeling photo-resist layer without damage to metal wir

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Removal of imaged layers

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430256, 430325, 430331, G03C 500

Patent

active

057597510

ABSTRACT:
A semiconductor manufacturer peels a photo-resist mask off by using organic alkaline solvent, and the residual alkaline solvent is neutralized with acid before a rinse in pure water so as to prevent a metal wiring from erosion due to strong alkaline solution produced from the residual organic alkaline solvent.

REFERENCES:
patent: 4714517 (1987-12-01), Malladi et al.
patent: 5308745 (1994-05-01), Schwartzkopf
patent: 5578193 (1996-11-01), Aoki et al.
Inorganic Chemistry, 2nd ed., J.E. Huheey, Haper & Row, NY, 1978, pp. 258-259.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of peeling photo-resist layer without damage to metal wir does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of peeling photo-resist layer without damage to metal wir, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of peeling photo-resist layer without damage to metal wir will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1457947

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.