Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-07-15
1990-02-13
Bueker, Richard
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
427 62, 427 63, 427 431, 427 96, B05D 306, B05D 512
Patent
active
049007092
ABSTRACT:
Method of applying in accordance with a pattern thin layers of oxidic superconductive material onto a substrate, it not being necessary to subject the superconductive material to mechanical or chemical treatments. At its surface the substrate is provided in accordance with a desired pattern with two different material compositions. The first composition is chosen such that the oxidic material applied thereon is superconductive at a desired surface temperature. The second composition is chosen such that the oxidic material applied thereon is not superconductive.
REFERENCES:
patent: 4316785 (1982-02-01), Suzuki et al.
Guruitch et al., "Preparation and Substrate Reaction of Superconducting Y-B.sub.a -C.sub.u -O Films", Appl. Phys. Lett., 51(13), pp. 1027-1029, Sep. 1987.
Lee et al., "Microprobe Characterization of Sputtered High Tc Superconducting Films on Silicon", AIP Conference Proceeding, No. 165, pp. 427-434, Nov. 1987.
Gao et al., "Interface Formation: High-Temperature Superconductors With Noble Metals, Reactive Transition Metals, and Semiconductors", AIP Conference Proceeding, No. 165, pp. 358-367, edited by Harper et al., Nov. 1987.
Heijman Maritza G. J.
Zalm Peter C.
Bueker Richard
King Roy V.
Spain Norman N.
U.S. Philips Corporation
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