Metallic modified material of intermetallic compound and a proce

Details Metallic modified material of intermetallic compound and a proce Metallic modified material of intermetallic compound and a proce

1978-10-24

1980-09-30

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

C23C 1500

Patent

active

042254094

ABSTRACT:
The present invention is concerned with a new metallic modified material of intermetallic compound, which has the same chemical composition as an intermetallic compound semi-conductor with a zincblende-type or wurtzite-type crystalline structure and further has a rocksalt-type crystalline structure and which is stable at room temperature under atmospheric pressure to a high pressure.

REFERENCES:
patent: 3979271 (1976-09-01), Noreika et al.
J. Cervenek, Structure and Electrical Properties of In Sb Thin Films Prepared by Plasmatic Sputtering; Czech. J. Phys.; vol. 20, No. 1, pp. 84-93.
J. E. Green et al., Epitaxial Growth of Ini-xGa.sub.x Sb Thin Films by Multitarget rf Sputtering; Journal of Applied Physics, vol. 47, No. 6, Jun. 1976, pp. 2289-2297.
J. R. Gaveler, M. A. Janocko, et al., Sputtering Techniques for . . . Superconducting Compounds; Journal of Vacuum Science and Technology, vol. 8, No. 1, pp. 180-183.
R. Ueda, Synthesis and Epitaxial Growth of CdTe Films by Neutral and Ionized Beams; Journal of Crystal Growth 31 (1975), pp. 333-338.
S. Ogawa, Deposition of High-Purity Nb Films by Tetrode Sputtering, Journal of Vacuum Science and Technology, vol. 8, No. 1, pp. 192-194.
Robert W. Berry et al., Thin Film Technology, Von Nostrand Reinhold Co, New York, 1968, pp. 214-216.

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