Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1999-01-20
2000-10-24
Kelly, C. H.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430316, 216 47, G03C 500, B44C 122
Patent
active
061365114
ABSTRACT:
The invention includes a multilayer resist method of patterning a substrate. In one implementation, a first etch mask layer is formed over a substrate. A second etch mask layer is deposited over the first etch mask layer at a temperature of less than or equal to 20.degree. C. A resist layer is formed and patterned over the second etch mask layer. The second etch mask layer is etched through, through an opening formed in the resist layer. The first etch mask layer is etched through using at least the etched second mask layer as a mask. In one implementation, a first etch mask layer is formed over a substrate. A second etch mask layer comprising a silanol is formed over the first etch mask layer. The silanol of the second etch mask layer is converted to a silicon oxide. H.sub.2 O from the second etch mask layer is driven out at a temperature of at least about 100.degree. C. A resist layer is formed and patterned over the silicon oxide containing second etch mask layer. The second etch mask layer is etched through, through an opening formed in the resist layer. The first etch mask layer is etched through using at least the etched second mask layer as a mask. After etching through the first etch mask layer, etching is conducted into a substrate layer beneath the first etch mask layer using at least the etched first mask layer as a mask. After etching into the substrate layer, all of the first etch mask layer and any remaining second etch mask layer are removed from the substrate.
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Reinberg Alan R.
Rolfson J. Brett
Kelly C. H.
Micro)n Technology, Inc.
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