Method of patterning sidewalls of a trench in integrated circuit

Details Method of patterning sidewalls of a trench in integrated circuit Method of patterning sidewalls of a trench in integrated circuit

1998-09-02

2000-06-06

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

438 6, 438510, 438424, 438706, 438696, 438700, H01L 2144

Patent

active

060718153

ABSTRACT:
A method of patterning a layer on sidewalls of a trench in a substrate for integrated circuits includes the steps of forming an insulator layer on sidewalls of a trench in a substrate with a horizontal top surface above the sidewalls, recessing a masking material such as an organic photoresist in the trench below the top surface of the substrate such that a portion of the insulator layer on the sidewalls of the substrate is exposed, and etching the insulator layer with a gaseous hydrogen flouride-ammonia mixture. The masking material and the substrate are composed of a different material than the insulator layer.

REFERENCES:
patent: Re31506 (1984-01-01), Ogiue et al.
patent: 3671437 (1972-06-01), Pless
patent: 3839111 (1974-10-01), Ham et al.
patent: 3860464 (1975-01-01), Erdman et al.
patent: 3976524 (1976-08-01), Feng
patent: 3994817 (1976-11-01), Quintana
patent: 4111724 (1978-09-01), Ogiue et al.
patent: 4343677 (1982-08-01), Kinsbron et al.
patent: 4517106 (1985-05-01), Hopkins et al.
patent: 4904338 (1990-02-01), Kozicki
patent: 5256247 (1993-10-01), Watanabe et al.
patent: 5268069 (1993-12-01), Chapple-Sokol et al.
patent: 5282925 (1994-02-01), Jeng et al.
patent: 5612252 (1997-03-01), Jur et al.
T. K. Whidden, et al.; Catalyzed HF Vapor Etching of Silicon Dioxide for Micro- and Nanolithographic Masks; J. Electrochem. Soc., vol. 142, No. 4, Apr., 1995; pp. 1199-1205.

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