Method of patterning semiconductor structure and structure...

Details Method of patterning semiconductor structure and structure... Method of patterning semiconductor structure and structure...

2011-08-02

2011-08-02

Gebremariam, Samuel A (Department: 2811)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S183000, C438S211000

Reexamination Certificate

active

07989357

ABSTRACT:
Method of patterning a semiconductor structure is disclosed. The method involves crystallographic etching techniques to enhance a patterned monocrystalline layer as a hard mask. In one embodiment, the method includes bonding a monocrystalline silicon layer to a non-crystalline protective layer; patterning the monocrystalline layer to form a hard mask; enhancing the pattern of the hard mask; stripping the hard mask after conventional etching of protective layer; and forming a gate oxide thereon. The enhanced patterning of the hard mask is performed with crystallographic etching to replace optical effects of rounding and dimension narrowing at the ends of a defined region with straight edges and sharp corners. A resulting structure from the use of the enhanced patterned hard mask includes a layer of composite materials on the substrate of the semiconductor structure. The layer of composite materials includes different materials in discrete blocks defined by straight edges within the layer.

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