Method of patterning dummy layer

Details Method of patterning dummy layer Method of patterning dummy layer

1998-08-24

2000-04-25

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438692, 438959, 257758, 257506, H01L 2176

Patent

active

060543620

ABSTRACT:
A method of patterning a dummy layer is provided using the dark/clear ratio. First, the area of devices and the area of relevant devices are defined. The relevant devices are usually positioned around the devices. The devices, the relevant devices, and other regions are united according to the design rules to form a non-dummy pattern region. Then a dummy pattern region is defined. There are many dummy bulks in the dummy pattern region. Next, a known dark/clear ratio of the non-dummy pattern region is provided. A density of the dummy patterns is obtained from the known dark/clear ratio, the length of the dummy bulk, the width of the dummy bulk and a equation. The equation is as follows: the known dark/clear ratio=(the length-the parameter)(the width-the parameter)/[the length.times.the width-(the length-the parameter)(the width-the parameter)]. After obtaining the parameter, each dummy bulk is divided into two regions including a clear region and a dark region. A dummy layer is formed in the dark region of the dummy bulk.

REFERENCES:
patent: 5728620 (1998-03-01), Park
patent: 5734192 (1998-03-01), Sengle et al.
patent: 5965941 (1996-10-01), Weling et al.

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