Method of patterning Cr-Pt-Au metallization for silicon devices

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29578, 156649, 156656, 204192E, 427 89, 427 98, H01L 2188

Patent

active

040352080

ABSTRACT:
The disclosure relates to patterning of platinum effectively and then removing the mask from the platinum without attacking the chromium metal beneath the platinum. If tantalum is used on top, which metal can be patterned with CF.sub.4, the tantalum can be patterned and the platinum can then be patterned quite readily and the tantalum can then be removed with the CF.sub.4 again and then the gold can be plated up onto the platinum patterns and the chromium can then be etched out using conventional chromium etch which will not attack any of the other metals.
This solves the problem of high yield patterning with a metal mask and process for patterning and removal of that metal mask that is compatible with the chromium-platinum metal system. The advantage of the chromium-platinum system over the titanium-platinum system is the resistance of the chromium to silicon etch. Therefore, the principal application of this invention would be in the fabrication of mesa devices.

REFERENCES:
patent: 3386894 (1968-06-01), Steppat
patent: 3642548 (1972-02-01), Eger
patent: 3657029 (1972-04-01), Fuller
patent: 3795557 (1974-03-01), Jacob
patent: 3900944 (1975-08-01), Fuller et al.
patent: 3951709 (1976-04-01), Jacob

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of patterning Cr-Pt-Au metallization for silicon devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of patterning Cr-Pt-Au metallization for silicon devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of patterning Cr-Pt-Au metallization for silicon devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-486143

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.