Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-01-02
2007-01-02
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S949000, C257SE21026, C257SE21414, C430S005000
Reexamination Certificate
active
10381865
ABSTRACT:
A high-precision patterning is conducted with a half-tone resist thickness being prevented from varying due to the presence/absence of a base film. A transmitting portion and two kinds of semi-transmitting portions, providing different quantities of transmitted light, are provided in a photomask for exposing a resist, and a smaller-transimitting-light-quantity semi-transmitting portion is used in a base film-present area and a large-transmitting light-quantity semi-transmitting portion is used in a base-film-free area to regulate luminous exposure while exposing, thereby forming a half-tone resist having uniform thickness.
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Ishikawa Yoshimitsu
Nakashima Ken
Yamaguchi Takehisa
Advanced Display Inc.
Gurley Lynne A.
Isaac Stanetta
Ware Fressola Van Der Sluys & Adolphson LLP
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