Method of patterning a substrate

Details Method of patterning a substrate Method of patterning a substrate

2005-01-04

2005-01-04

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

C438S151000, C438S479000

Reexamination Certificate

active

06838361

ABSTRACT:
The invention provides a method of pattering a substrate, in which a first material in solution is deposited on the substrate. The composition of the solution of the first material is selected so it dries to leave a residue of the first material on the substrate, the residue comprising a thin film in the centre and a ridge around the perimeter. The residue is etched to remove the thin film, leaving the ridge on the substrate. After etching the ridge is hydrophobic and the substrate is hydrophilic. An aqueous solution of a second material is then deposited on both sides of the ridge. After the aqueous solution has dried, the ridge is removed, leaving a layer of the second material on the substrate, the layer having a narrow gap therethrough. The layer may be used for the source and drain electrodes of an organic thin film transistor.

REFERENCES:
patent: 6087196 (2000-07-01), Sturm et al.
patent: 0 989 778 (2000-03-01), None
patent: WO 9939373 (1999-08-01), None
Kawase, T., et al., “All-Polymer Thin Film Transistors Fabbricated by High-Resolution Ink-jet Printing”, Dec. 10-13, 2000, IEDM 2000, pp. 623-626.*
Sirringhaus et al., “High-Resolution Inkjet Printing of All-Polymer Transistor Circuits”, SCIENCE, vol. 290, No. 5499, pp. 2123-2126, Dec., 2000.

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