Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2006-09-27
2010-10-12
Davis, Daborah Chacko (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S314000, C430S394000, C430S330000
Reexamination Certificate
active
07811746
ABSTRACT:
A single exposure method and a double exposure method for reducing mask error factor and for enhancing lithographic printing-process resolution is presented. The invention comprises decomposing a desired pattern of dense lines and spaces in two sub patterns of semi-dense spaces that are printed in interlaced position with respect to each other, using positive tone resist. Each of the exposures is executed after applying a relative space-width widening to the spaces of two corresponding patterning device patterns of semi-dense spaces. A factor representative for the space-width widening has a value between 1 and 3, thereby reducing mask error factor and line edge roughness.
REFERENCES:
patent: 6042998 (2000-03-01), Brueck et al.
patent: 6569605 (2003-05-01), Bae
patent: 2002/0150841 (2002-10-01), Wang et al.
European Search Report issued for European Patent Application No. 06255143.7-2222, dated Feb. 19, 2007.
Maenhoudt, et al., “Double Patterning Scheme for sub-0.25 k1 Single Damascene Structures at NA=0.75, λ=193nm,” Optical Microlithography XVIII, Proceedings of SPIE vol. 5754, 2005, pp. 1508-1518.
Ebihara, et al., “Beyond K1=0.25 Lithography: 70nm L/S Patterning Using KrF Scanners,” Proceedings of SPIE vol. 5256, 2003, pp. 985-994.
Fu et al., “Maximization of Process Window for Low-k1 Spaces Using KrF Lithography,” Proceedings of SPIE, vol. 5040, 2003, pp. 955-966.
Yan, et al., “Sub-Micron Low-k1Imaging Characteristics Using a DUV Printing Tool and Binary Masks,” Proceedings of SPIE, vol. 2440, pp. 270-277, no Date.
Neisser et al., Simulation and Experimental Evaluation of Double Exposure Techniques, IBM Microelectronics, 372/SPIE vol. 3334, pp. 372-383.
Yen et al., Low-K, Optical Lithography for 100 nm Logic Technology and Beyong, J. Vac. Sci. Technol. B 19(6), Nov./Dec. 2001, pp. 2329-2334.
ASML Netherlands B.V.
Chacko Davis Daborah
Pillsbury Winthrop Shaw & Pittman LLP
LandOfFree
Method of patterning a positive tone resist layer overlaying... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of patterning a positive tone resist layer overlaying..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of patterning a positive tone resist layer overlaying... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4199856