Method of patterning a porous dielectric material

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S629000, C438S653000, C257SE21584

Reexamination Certificate

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11169367

ABSTRACT:
A method of patterning a porous dielectric material that includes an ash process to treat the porous dielectric material. The treated porous dielectric material allows for the formation of a substantially continuous barrier layer, which can inhibit diffusion of, for example, a conductive material into to the dielectric material. Other embodiments are described and claimed.

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