Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-22
2007-05-22
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S629000, C438S653000, C257SE21584
Reexamination Certificate
active
11169367
ABSTRACT:
A method of patterning a porous dielectric material that includes an ash process to treat the porous dielectric material. The treated porous dielectric material allows for the formation of a substantially continuous barrier layer, which can inhibit diffusion of, for example, a conductive material into to the dielectric material. Other embodiments are described and claimed.
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Boyanov Boyan
Kloster Grant M.
Park Hyun-Mog
RamachandraRao Vijayakumar S.
Intel Corporation
Picardat Kevin M.
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