Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2011-04-19
2011-04-19
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S751000, C438S754000, C257SE21020
Reexamination Certificate
active
07927959
ABSTRACT:
A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.
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Doyle Brian
Jong Lana
Keating Steven J.
Lindert Nick
Rahhal-Orabi Nadia
Intel Corporation
Nelson Kenneth A.
Smoot Stephen W
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