Method of patterning a magnetic memory cell bottom electrode...

Details Method of patterning a magnetic memory cell bottom electrode... Method of patterning a magnetic memory cell bottom electrode...

2005-02-01

2005-02-01

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S171000, C438S210000, C257S295000, C365S145000, C365S171000

Reexamination Certificate

active

06849465

ABSTRACT:
A method of patterning a bottom electrode for a magnetic memory cell. The bottom electrode is patterned prior to the deposition of the soft layer of the magnetic tunnel junction (MTJ) material stack, preventing the formation of fencing on the sidewalls of the soft layer, which can cause shorts to subsequently formed conductive lines of the magnetic memory device. A sacrificial mask is used to pattern the bottom electrode material, and at least a portion of the sacrificial mask is consumed or removed during the patterning of the bottom electrode material. The soft layer is then deposited and patterned using a hard mask.

REFERENCES:
patent: 5365096 (1994-11-01), Taniguchi
patent: 5679980 (1997-10-01), Summerfelt
patent: 5708284 (1998-01-01), Onishi
patent: 5940319 (1999-08-01), Durlam et al.
patent: 6097051 (2000-08-01), Torii et al.
patent: 6153443 (2000-11-01), Durlam et al.
patent: 6518588 (2003-02-01), Parkin et al.
patent: 6583507 (2003-06-01), Moon et al.
patent: 6703676 (2004-03-01), Hirai et al.
patent: 20020096775 (2002-07-01), Ning
patent: 20030216018 (2003-11-01), Yamada et al.
patent: 20040026369 (2004-02-01), Ying et al.
patent: 20040043579 (2004-03-01), Nuetzel et al.

Affiliated with

Also associated with

Rating

Method of patterning a magnetic memory cell bottom electrode... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of patterning a magnetic memory cell bottom electrode..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of patterning a magnetic memory cell bottom electrode... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3486740