Method of patterning a low-k dielectric using a hard mask

Details Method of patterning a low-k dielectric using a hard mask Method of patterning a low-k dielectric using a hard mask

2005-11-28

2008-08-26

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S692000, C438S724000, C438S725000, C438S734000, C438S952000, C257SE21029, C257SE21257, C257SE21277, C257SE21579

Reexamination Certificate

active

07416992

ABSTRACT:
By using a non-metallic hard mask for patterning low-k dielectric materials of advanced semiconductor devices, an enhanced degree of etch fidelity is obtained. The present invention may readily be applied to via first-trench last, trench first-via last schemes.

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