Method of passivating the surface of a Si substrate

Details Method of passivating the surface of a Si substrate Method of passivating the surface of a Si substrate

1998-02-17

2000-08-29

Smith, Matthew

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

117108, H01L 2131

Patent

active

061108405

ABSTRACT:
A method of passivating the surface of a Si wafer is disclosed including the steps of cleaning the surface of the Si wafer and depositing an alkaline earth metal on the clean surface at a wafer temperature in a range of approximately 400.degree. C. to 750.degree. C. The surface is monitored during deposition to detect a (4.times.2) surface reconstruction pattern indicating approximately a one-quarter monolayer of alkaline earth metal is formed. The wafer is annealed at a temperature in a range of 800.degree. C. to 900.degree. C. until the alkaline earth metal forms an alkaline earth metal silicide with a (2.times.1) surface pattern on the surface.

REFERENCES:
patent: 5225031 (1993-07-01), Mckee et al.
patent: 5482003 (1996-01-01), McKee et al.
patent: 5648321 (1997-07-01), Bednorz et al.
patent: 5690737 (1997-11-01), Santiago et al.
patent: 5783495 (1998-07-01), Li et al.

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