Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-10
2000-02-15
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438624, 438633, 438692, 438763, 438958, 438959, H01L 21316
Patent
active
060252626
ABSTRACT:
A method of passivating an outer portion of a semiconductor wafer comprises: a) applying and patterning a metal layer to define conductive metal runners projecting atop the wafer, the conductive metal runners projecting outwardly from the wafer at given distances; b) applying an insulating dielectric layer atop the wafer to a thickness which is greater than the given distance of a furthest projecting metal runner; c) global planarizing the insulating dielectric layer to some point on the wafer which is elevationally above the underlying conductive metal runners; the preferred method is by chemical mechanical polishing; and d) applying a planar layer of an effective mechanical protection, chemical diffusion barrier and moisture barrier material atop the globally planarized layer of insulating dielectric.
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Doan Trung Tri
Tuttle Mark E.
Bowers Charles
Micro)n Technology, Inc.
Nguyen Thanh
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