Method of passivating semiconductor device

Details Method of passivating semiconductor device Method of passivating semiconductor device

2007-10-09

2007-10-09

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

C438S154000, C438S199000, C438S958000

Reexamination Certificate

active

11416100

ABSTRACT:
In a method of passivating a semiconductor device with two types of transistors, e.g., NMOS and PMOS transistor, the semiconductor device is placed in a pressurized sealed chamber and at least two different passivating gases are introduced into the chamber. The two passivating gases can be selected to have one gas suitable for passivating PMOS transistors and the other gas suitable for NMOS transistors.

REFERENCES:
patent: 5545289 (1996-08-01), Chen et al.
patent: 6238933 (2001-05-01), Sun et al.
patent: 6274490 (2001-08-01), Chyan et al.
patent: 6670289 (2003-12-01), Lane et al.
patent: 6723665 (2004-04-01), Tanabe et al.
patent: 2002/0020840 (2002-02-01), Nakajima
patent: 2003/0045131 (2003-03-01), Verbeke et al.
patent: 2003/0132900 (2003-07-01), Yamauchi et al.
patent: 2003/0186518 (2003-10-01), Callegari et al.
patent: 2004/0058560 (2004-03-01), Ranish et al.
Semconductor Glossary online definition for “forming gas”, 2007.
S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, p. 145.

Affiliated with

Also associated with

Rating

Method of passivating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of passivating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of passivating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3871890