Method of passivating semiconductor device

Details Method of passivating semiconductor device Method of passivating semiconductor device

2006-05-16

2006-05-16

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

C438S154000, C438S199000, C438S958000

Reexamination Certificate

active

07045376

ABSTRACT:
A method of passivating a semiconductor device with two types of transistors, e.g., NMOS and PMOS transistors, the semiconductor device is placed in a pressurized sealed chamber and at least two different passivating gases are introduced into the chamber. The two passivating gases can be selected to have one gas suitable for passivating PMOS transistors and the other gas suitable for NMOS transistors.

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S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, p. 145.

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