Method of passivating oxide/compound semiconductor interface

Details Method of passivating oxide/compound semiconductor interface Method of passivating oxide/compound semiconductor interface

2007-04-10

2007-04-10

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S590000, C257S021000

Reexamination Certificate

active

10882482

ABSTRACT:
The present invention provides a method of passivating an oxide compound disposed on a III-V semiconductor substrate. The method is intended for use with dielectric stacks, gallate compounds, and gallium compounds used in gate quality oxide layers. The method includes heating a semiconductor structure at an elevated temperature of between about 230° C. and about 400° C. The semiconductor structure is exposed to an atmosphere that is supersaturated with water vapor or vapor of deuterium oxide. The exposure takes place at elevated temperature and continues for a period of time between about 5 minutes to about 120 minutes. It has been found that the method of the present invention results in a semiconductor product that has significantly improved performance characteristics over semiconductors that are not passivated, or that use a dry hydrogen method of passivation.

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