Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-08
2006-08-08
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S471000
Reexamination Certificate
active
07087518
ABSTRACT:
One aspect of the invention relates to a method of removing contaminants from a low-k film. The method involves forming a sacrificial layer over the contaminated film. The contaminants combine with the sacrificial layer and are removed by etching away the sacrificial layer. An effective material for the sacrificial layer is, for example, a silicon carbide. The method can be used to prevent the occurrence of pattern defects in chemically amplified photoresists formed over low-k films.
REFERENCES:
patent: 6066572 (2000-05-01), Lu et al.
patent: 6137126 (2000-10-01), Avanzino et al.
patent: 6268294 (2001-07-01), Jang et al.
patent: 6287972 (2001-09-01), Ziger et al.
patent: 6342448 (2002-01-01), Lin et al.
patent: 6365527 (2002-04-01), Yang et al.
patent: 6376353 (2002-04-01), Zhou et al.
patent: 6429121 (2002-08-01), Hopper et al.
patent: 6534397 (2003-03-01), Okada et al.
patent: 6562700 (2003-05-01), Gu et al.
patent: 6600207 (2003-07-01), Huang et al.
patent: 2002/0098685 (2002-07-01), Sophie et al.
patent: 2003/0003765 (2003-01-01), Gibson et al.
patent: 2003/0224585 (2003-12-01), Farber et al.
Copper Interconnects Face FAB Realities, Volume Production Required Careful Attention to Facilities Design, Process Integration, Katherine Derbyshire, SemiConductor Magazine, Nov. 2001, vol. 2, No. 11, reprinted from the Internet at http://www.semi.org/web/wmagazine.nsf/ad09cecebf092171882565e6001fc57/d78d1863fd. 6 pages.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1—Process Technology, 2nded., Lattice Press: Sunset Beach CA , 2000, pp. 743 and 746.
Dostalik William Wesley
Farber David Gerald
Kraft Robert
McKerrow Andrew J.
Newton Kenneth Joseph
Brady III Wade James
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Method of passivating and/or removing contaminants on a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of passivating and/or removing contaminants on a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of passivating and/or removing contaminants on a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3682879