Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-06-07
2011-06-07
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S958000, C438S073000, C257S058000, C257SE21560, C257SE23132
Reexamination Certificate
active
07955992
ABSTRACT:
A method of forming a passivation layer comprises contacting at least one surface of a wide band-gap semiconductor material with a passivating agent comprising an alkali hypochloride to form the passivation layer on said at least one surface. The passivation layer may be encapsulated with a layer of encapsulation material.
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Awadalla Salah
Chen Henry
Lu Pinghe
Redlen Technologies, Inc.
Stark Jarrett J
The Marbury Law Group PLLC
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