Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Patent
1994-12-30
1996-06-11
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
257784, H01L 2348, H01L 2352
Patent
active
055258395
ABSTRACT:
A process for forming a stress relief layer on a semiconductor die and the resulting structure of the process is described. The stress relief layer is formed on a surface of a die which has already been attached to a die attach pad of a lead frame by a cured epoxy. The purpose of the layer is to act as a stress relief buffer by relieving the die surface from contraction forces created by a plastic material used for encapsulating the die and die attach pad portion of the lead frame, as the plastic material cools following hot injection molding of the material to form the encapsulation. Prior to application of the stress relief material onto the surface of the die, the surface is cleaned to restore its high surface energy. The stress relief material is formed by diluting a silicone compound with a non-reactive diluent such as a silicone oil so that both the surface energy and viscosity of the silicone compound is reduced. Following application of the stress relief material onto the surface of the semiconductor die, the applied layer is cured and as a consequence, the non-reactive diluent evaporates out of the applied stress relief layer.
REFERENCES:
patent: 4499149 (1985-02-01), Berger
patent: 5023697 (1991-06-01), Tsumura
patent: 5157061 (1992-10-01), Ito et al.
Clark Jhihan
Crane Sara W.
VLSI Technology Inc.
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