Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2009-07-28
2010-02-02
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C438S107000, C438S109000, C438S118000, C438S119000, C438S127000
Reexamination Certificate
active
07655502
ABSTRACT:
A method of packaging a first device having a first major surface and a second major surface includes forming a first layer over a second major surface of the first device and around sides of the first device and leaving the first major surface of the first device exposed, wherein the first layer is selected from the group consisting of an encapsulant and a polymer; forming a first dielectric layer over the first major surface of the first device, forming a via in the first dielectric layer, forming a seed layer within the via and over a portion of the first dielectric layer, physically coupling a connector to the seed layer, and plating a conductive material over the seed layer to form a first interconnect in the first via and over a portion of the first dielectric layer.
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Burch Kenneth R.
Mangrum Marc A.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Pham Thanh V
Vo Kim-Marie
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